Three-dimensional crossbar arrays of self-rectifying Si/SiO2/Si memristors

Can Li, Lili Han, Hao Jiang, Moon-Hyung Jang, Peng Lin, Qing Wu, Mark Barnell, J. Joshua Yang, Huolin L. Xin and Qiangfei Xia ()
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Can Li: University of Massachusetts
Lili Han: University of Massachusetts
Hao Jiang: University of Massachusetts
Moon-Hyung Jang: University of Massachusetts
Peng Lin: University of Massachusetts
Qing Wu: Air Force Research Laboratory, Information Directorate
Mark Barnell: Air Force Research Laboratory, Information Directorate
J. Joshua Yang: University of Massachusetts
Huolin L. Xin: Center for Functional Nanomaterials, Brookhaven National Laboratory
Qiangfei Xia: University of Massachusetts

Nature Communications, 2017, vol. 8, issue 1, 1-9

Abstract: Abstract Memristors are promising building blocks for the next-generation memory and neuromorphic computing systems. Most memristors use materials that are incompatible with the silicon dominant complementary metal-oxide-semiconductor technology, and require external selectors in order for large memristor arrays to function properly. Here we demonstrate a fully foundry-compatible, all-silicon-based and self-rectifying memristor that negates the need for external selectors in large arrays. With a p-Si/SiO2/n-Si structure, our memristor exhibits repeatable unipolar resistance switching behaviour (105 rectifying ratio, 104 ON/OFF) and excellent retention at 300 °C. We further build three-dimensinal crossbar arrays (up to five layers of 100 nm memristors) using fluid-supported silicon membranes, and experimentally confirm the successful suppression of both intra- and inter-layer sneak path currents through the built-in diodes. The current work opens up opportunities for low-cost mass production of three-dimensional memristor arrays on large silicon and flexible substrates without increasing circuit complexity.

Date: 2017
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DOI: 10.1038/ncomms15666

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