Large spin accumulation and crystallographic dependence of spin transport in single crystal gallium nitride nanowires

Tae-Eon Park, Youn Ho Park, Jong-Min Lee, Sung Wook Kim, Hee Gyum Park, Byoung-Chul Min, Hyung-jun Kim, Hyun Cheol Koo, Heon-Jin Choi, Suk Hee Han, Mark Johnson and Joonyeon Chang ()
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Tae-Eon Park: Center for Spintronics, Post-Si Semiconductor Institute, Korea Institute of Science and Technology
Youn Ho Park: Center for Spintronics, Post-Si Semiconductor Institute, Korea Institute of Science and Technology
Jong-Min Lee: Center for Spintronics, Post-Si Semiconductor Institute, Korea Institute of Science and Technology
Sung Wook Kim: Yonsei University
Hee Gyum Park: Center for Spintronics, Post-Si Semiconductor Institute, Korea Institute of Science and Technology
Byoung-Chul Min: Center for Spintronics, Post-Si Semiconductor Institute, Korea Institute of Science and Technology
Hyung-jun Kim: Center for Spintronics, Post-Si Semiconductor Institute, Korea Institute of Science and Technology
Hyun Cheol Koo: Center for Spintronics, Post-Si Semiconductor Institute, Korea Institute of Science and Technology
Heon-Jin Choi: Yonsei University
Suk Hee Han: Center for Spintronics, Post-Si Semiconductor Institute, Korea Institute of Science and Technology
Mark Johnson: Naval Research Laboratory
Joonyeon Chang: Center for Spintronics, Post-Si Semiconductor Institute, Korea Institute of Science and Technology

Nature Communications, 2017, vol. 8, issue 1, 1-7

Abstract: Abstract Semiconductor spintronics is an alternative to conventional electronics that offers devices with high performance, low power and multiple functionality. Although a large number of devices with mesoscopic dimensions have been successfully demonstrated at low temperatures for decades, room-temperature operation still needs to go further. Here we study spin injection in single-crystal gallium nitride nanowires and report robust spin accumulation at room temperature with enhanced spin injection polarization of 9%. A large Overhauser coupling between the electron spin accumulation and the lattice nuclei is observed. Finally, our single-crystal gallium nitride samples have a trigonal cross-section defined by the (001), ( ) and ( ) planes. Using the Hanle effect, we show that the spin accumulation is significantly different for injection across the (001) and ( ) (or ( )) planes. This provides a technique for increasing room temperature spin injection in mesoscopic systems.

Date: 2017
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DOI: 10.1038/ncomms15722

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