Rewritable ghost floating gates by tunnelling triboelectrification for two-dimensional electronics

Seongsu Kim, Tae Yun Kim, Kang Hyuck Lee, Tae-Ho Kim, Francesco Arturo Cimini, Sung Kyun Kim, Ronan Hinchet, Sang-Woo Kim () and Christian Falconi ()
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Seongsu Kim: School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU)
Tae Yun Kim: SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University (SKKU)
Kang Hyuck Lee: School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU)
Tae-Ho Kim: School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU)
Francesco Arturo Cimini: University of Rome Tor Vergata
Sung Kyun Kim: School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU)
Ronan Hinchet: School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU)
Sang-Woo Kim: School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU)
Christian Falconi: University of Rome Tor Vergata

Nature Communications, 2017, vol. 8, issue 1, 1-7

Abstract: Abstract Gates can electrostatically control charges inside two-dimensional materials. However, integrating independent gates typically requires depositing and patterning suitable insulators and conductors. Moreover, after manufacturing, gates are unchangeable. Here we introduce tunnelling triboelectrification for localizing electric charges in very close proximity of two-dimensional materials. As representative materials, we use chemical vapour deposition graphene deposited on a SiO2/Si substrate. The triboelectric charges, generated by friction with a Pt-coated atomic force microscope tip and injected through defects, are trapped at the air–SiO2 interface underneath graphene and act as ghost floating gates. Tunnelling triboelectrification uniquely permits to create, modify and destroy p and n regions at will with the spatial resolution of atomic force microscopes. As a proof of concept, we draw rewritable p/n+ and p/p+ junctions with resolutions as small as 200 nm. Our results open the way to time-variant two-dimensional electronics where conductors, p and n regions can be defined on demand.

Date: 2017
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DOI: 10.1038/ncomms15891

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