Cascaded exciton energy transfer in a monolayer semiconductor lateral heterostructure assisted by surface plasmon polariton
Jinwei Shi,
Meng-Hsien Lin,
I-Tung Chen,
Nasim Mohammadi Estakhri,
Xin-Quan Zhang,
Yanrong Wang,
Hung-Ying Chen,
Chun-An Chen,
Chih-Kang Shih,
Andrea Alù,
Xiaoqin Li (),
Yi-Hsien Lee () and
Shangjr Gwo ()
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Jinwei Shi: National Tsing-Hua University
Meng-Hsien Lin: National Tsing-Hua University
I-Tung Chen: National Tsing-Hua University
Nasim Mohammadi Estakhri: University of Pennsylvania
Xin-Quan Zhang: National Tsing-Hua University
Yanrong Wang: Beijing Normal University
Hung-Ying Chen: National Tsing-Hua University
Chun-An Chen: National Tsing-Hua University
Chih-Kang Shih: The University of Texas at Austin
Andrea Alù: The University of Texas at Austin
Xiaoqin Li: The University of Texas at Austin
Yi-Hsien Lee: National Tsing-Hua University
Shangjr Gwo: National Tsing-Hua University
Nature Communications, 2017, vol. 8, issue 1, 1-7
Abstract:
Abstract Atomically thin lateral heterostructures based on transition metal dichalcogenides have recently been demonstrated. In monolayer transition metal dichalcogenides, exciton energy transfer is typically limited to a short range (~1 μm), and additional losses may be incurred at the interfacial regions of a lateral heterostructure. To overcome these challenges, here we experimentally implement a planar metal-oxide-semiconductor structure by placing a WS2/MoS2 monolayer heterostructure on top of an Al2O3-capped Ag single-crystalline plate. We find that the exciton energy transfer range can be extended to tens of microns in the hybrid structure mediated by an exciton-surface plasmon polariton–exciton conversion mechanism, allowing cascaded exciton energy transfer from one transition metal dichalcogenides region supporting high-energy exciton resonance to a different transition metal dichalcogenides region in the lateral heterostructure with low-energy exciton resonance. The realized planar hybrid structure combines two-dimensional light-emitting materials with planar plasmonic waveguides and offers great potential for developing integrated photonic and plasmonic devices.
Date: 2017
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Persistent link: https://EconPapers.repec.org/RePEc:nat:natcom:v:8:y:2017:i:1:d:10.1038_s41467-017-00048-y
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DOI: 10.1038/s41467-017-00048-y
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