Tunneling anisotropic magnetoresistance driven by magnetic phase transition

X. Z. Chen, J. F. Feng, Z. C. Wang, J. Zhang, X. Y. Zhong, C. Song (), L. Jin, B. Zhang, F. Li, M. Jiang, Y. Z. Tan, X. J. Zhou, G. Y. Shi, X. F. Zhou, X. D. Han, S. C. Mao, Y. H. Chen, X. F. Han and F. Pan ()
Additional contact information
X. Z. Chen: Tsinghua University
J. F. Feng: University of Chinese Academy of Sciences, Chinese Academy of Sciences
Z. C. Wang: Tsinghua University
J. Zhang: Huazhong University of Science and Technology
X. Y. Zhong: Tsinghua University
C. Song: Tsinghua University
L. Jin: Forschungszentrum Jülich GmbH
B. Zhang: Beijing University of Technology
F. Li: Tsinghua University
M. Jiang: Tsinghua University
Y. Z. Tan: Tsinghua University
X. J. Zhou: Tsinghua University
G. Y. Shi: Tsinghua University
X. F. Zhou: Tsinghua University
X. D. Han: Beijing University of Technology
S. C. Mao: Beijing University of Technology
Y. H. Chen: Beijing University of Technology
X. F. Han: University of Chinese Academy of Sciences, Chinese Academy of Sciences
F. Pan: Tsinghua University

Nature Communications, 2017, vol. 8, issue 1, 1-7

Abstract: Abstract The independent control of two magnetic electrodes and spin-coherent transport in magnetic tunnel junctions are strictly required for tunneling magnetoresistance, while junctions with only one ferromagnetic electrode exhibit tunneling anisotropic magnetoresistance dependent on the anisotropic density of states with no room temperature performance so far. Here, we report an alternative approach to obtaining tunneling anisotropic magnetoresistance in α′-FeRh-based junctions driven by the magnetic phase transition of α′-FeRh and resultantly large variation of the density of states in the vicinity of MgO tunneling barrier, referred to as phase transition tunneling anisotropic magnetoresistance. The junctions with only one α′-FeRh magnetic electrode show a magnetoresistance ratio up to 20% at room temperature. Both the polarity and magnitude of the phase transition tunneling anisotropic magnetoresistance can be modulated by interfacial engineering at the α′-FeRh/MgO interface. Besides the fundamental significance, our finding might add a different dimension to magnetic random access memory and antiferromagnet spintronics.

Date: 2017
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DOI: 10.1038/s41467-017-00290-4

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