Correlated electronic states at domain walls of a Mott-charge-density-wave insulator 1T-TaS2

Doohee Cho, Gyeongcheol Gye, Jinwon Lee, Sung-Hoon Lee, Lihai Wang, Sang-Wook Cheong and Han Woong Yeom ()
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Doohee Cho: Institute for Basic Science (IBS)
Gyeongcheol Gye: Pohang University of Science and Technology (POSTECH)
Jinwon Lee: Institute for Basic Science (IBS)
Sung-Hoon Lee: Institute for Basic Science (IBS)
Lihai Wang: Laboratory for Pohang Emergent Materials, Pohang University of Science and Technology (POSTECH)
Sang-Wook Cheong: Laboratory for Pohang Emergent Materials, Pohang University of Science and Technology (POSTECH)
Han Woong Yeom: Institute for Basic Science (IBS)

Nature Communications, 2017, vol. 8, issue 1, 1-6

Abstract: Abstract Domain walls in interacting electronic systems can have distinct localized states, which often govern physical properties and may lead to unprecedented functionalities and novel devices. However, electronic states within domain walls themselves have not been clearly identified and understood for strongly correlated electron systems. Here, we resolve the electronic states localized on domain walls in a Mott-charge-density-wave insulator 1T-TaS2 using scanning tunneling spectroscopy. We establish that the domain wall state decomposes into two nonconducting states located at the center of domain walls and edges of domains. Theoretical calculations reveal their atomistic origin as the local reconstruction of domain walls under the strong influence of electron correlation. Our results introduce a concept for the domain wall electronic property, the walls own internal degrees of freedom, which is potentially related to the controllability of domain wall electronic properties.

Date: 2017
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DOI: 10.1038/s41467-017-00438-2

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