Strain-engineered growth of two-dimensional materials

Geun Ho Ahn, Matin Amani, Haider Rasool, Lien Der-Hsien, James P. Mastandrea, Joel W. Ager, Madan Dubey, Daryl C. Chrzan, Andrew M. Minor and Ali Javey ()
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Geun Ho Ahn: University of California at Berkeley
Matin Amani: University of California at Berkeley
Haider Rasool: Lawrence Berkeley National Laboratory
Lien Der-Hsien: University of California at Berkeley
James P. Mastandrea: Lawrence Berkeley National Laboratory
Joel W. Ager: Lawrence Berkeley National Laboratory
Madan Dubey: US Army Research Laboratory
Daryl C. Chrzan: Lawrence Berkeley National Laboratory
Andrew M. Minor: Lawrence Berkeley National Laboratory
Ali Javey: University of California at Berkeley

Nature Communications, 2017, vol. 8, issue 1, 1-8

Abstract: Abstract The application of strain to semiconductors allows for controlled modification of their band structure. This principle is employed for the manufacturing of devices ranging from high-performance transistors to solid-state lasers. Traditionally, strain is typically achieved via growth on lattice-mismatched substrates. For two-dimensional (2D) semiconductors, this is not feasible as they typically do not interact epitaxially with the substrate. Here, we demonstrate controlled strain engineering of 2D semiconductors during synthesis by utilizing the thermal coefficient of expansion mismatch between the substrate and semiconductor. Using WSe2 as a model system, we demonstrate stable built-in strains ranging from 1% tensile to 0.2% compressive on substrates with different thermal coefficient of expansion. Consequently, we observe a dramatic modulation of the band structure, manifested by a strain-driven indirect-to-direct bandgap transition and brightening of the dark exciton in bilayer and monolayer WSe2, respectively. The growth method developed here should enable flexibility in design of more sophisticated devices based on 2D materials.

Date: 2017
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DOI: 10.1038/s41467-017-00516-5

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