Tuning magnetoresistance in molybdenum disulphide and graphene using a molecular spin transition

Subhadeep Datta, Yongqing Cai, Indra Yudhistira, Zebing Zeng, Yong-Wei Zhang, Han Zhang, Shaffique Adam, Jishan Wu () and Kian Ping Loh ()
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Subhadeep Datta: Shenzhen University
Yongqing Cai: Institute of High Performance Computing, A*STAR
Indra Yudhistira: Centre for Advanced 2D Materials (CA2DM), National University of Singapore
Zebing Zeng: National University of Singapore
Yong-Wei Zhang: Institute of High Performance Computing, A*STAR
Han Zhang: Shenzhen University
Shaffique Adam: Centre for Advanced 2D Materials (CA2DM), National University of Singapore
Jishan Wu: National University of Singapore
Kian Ping Loh: Shenzhen University

Nature Communications, 2017, vol. 8, issue 1, 1-8

Abstract: Abstract Coupling spins of molecular magnets to two-dimensional (2D) materials provides a framework to manipulate the magneto-conductance of 2D materials. However, with most molecules, the spin coupling is usually weak and devices fabricated from these require operation at low temperatures, which prevents practical applications. Here, we demonstrate field-effect transistors based on the coupling of a magnetic molecule quinoidal dithienyl perylenequinodimethane (QDTP) to 2D materials. Uniquely, QDTP switches from a spin-singlet state at low temperature to a spin-triplet state above 370 K, and the spin transition can be electrically transduced by both graphene and molybdenum disulphide. Graphene-QDTP shows hole-doping and a large positive magnetoresistance ( ~ 50%), while molybdenum disulphide-QDTP demonstrates electron-doping and a switch to large negative magnetoresistance ( ~ 100%) above the magnetic transition. Our work shows the promise of spin detection at high temperature by coupling 2D materials and molecular magnets.

Date: 2017
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DOI: 10.1038/s41467-017-00727-w

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