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Silicon single-photon avalanche diodes with nano-structured light trapping

Kai Zang (), Xiao Jiang, Yijie Huo, Xun Ding, Matthew Morea, Xiaochi Chen, Ching-Ying Lu, Jian Ma, Ming Zhou, Zhenyang Xia, Zongfu Yu, Theodore I. Kamins, Qiang Zhang and James S. Harris
Additional contact information
Kai Zang: Stanford University
Xiao Jiang: University of Science and Technology of China
Yijie Huo: Stanford University
Xun Ding: University of Science and Technology of China
Matthew Morea: Stanford University
Xiaochi Chen: Stanford University
Ching-Ying Lu: Stanford University
Jian Ma: University of Science and Technology of China
Ming Zhou: University of Wisconsin-Madison
Zhenyang Xia: University of Wisconsin-Madison
Zongfu Yu: University of Wisconsin-Madison
Theodore I. Kamins: Stanford University
Qiang Zhang: University of Science and Technology of China
James S. Harris: Stanford University

Nature Communications, 2017, vol. 8, issue 1, 1-6

Abstract: Abstract Silicon single-photon avalanche detectors are becoming increasingly significant in research and in practical applications due to their high signal-to-noise ratio, complementary metal oxide semiconductor compatibility, room temperature operation, and cost-effectiveness. However, there is a trade-off in current silicon single-photon avalanche detectors, especially in the near infrared regime. Thick-junction devices have decent photon detection efficiency but poor timing jitter, while thin-junction devices have good timing jitter but poor efficiency. Here, we demonstrate a light-trapping, thin-junction Si single-photon avalanche diode that breaks this trade-off, by diffracting the incident photons into the horizontal waveguide mode, thus significantly increasing the absorption length. The photon detection efficiency has a 2.5-fold improvement in the near infrared regime, while the timing jitter remains 25 ps. The result provides a practical and complementary metal oxide semiconductor compatible method to improve the performance of single-photon avalanche detectors, image sensor arrays, and silicon photomultipliers over a broad spectral range.

Date: 2017
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DOI: 10.1038/s41467-017-00733-y

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