Short-channel field-effect transistors with 9-atom and 13-atom wide graphene nanoribbons

Juan Pablo Llinas, Andrew Fairbrother, Gabriela Borin Barin, Wu Shi, Kyunghoon Lee, Shuang Wu, Byung Yong Choi, Rohit Braganza, Jordan Lear, Nicholas Kau, Wonwoo Choi, Chen Chen, Zahra Pedramrazi, Tim Dumslaff, Akimitsu Narita, Xinliang Feng, Klaus Müllen, Felix Fischer, Alex Zettl, Pascal Ruffieux, Eli Yablonovitch, Michael Crommie, Roman Fasel and Jeffrey Bokor ()
Additional contact information
Juan Pablo Llinas: University of California
Andrew Fairbrother: Empa, Swiss Federal Laboratories for Materials Science and Technology
Gabriela Borin Barin: Empa, Swiss Federal Laboratories for Materials Science and Technology
Wu Shi: Lawrence Berkeley National Laboratory
Kyunghoon Lee: University of California
Shuang Wu: University of California
Byung Yong Choi: University of California
Rohit Braganza: University of California
Jordan Lear: University of California
Nicholas Kau: UC Berkeley
Wonwoo Choi: UC Berkeley
Chen Chen: UC Berkeley
Zahra Pedramrazi: UC Berkeley
Tim Dumslaff: Max Planck Institute for Polymer Research
Akimitsu Narita: Max Planck Institute for Polymer Research
Xinliang Feng: TU Dresden
Klaus Müllen: Max Planck Institute for Polymer Research
Felix Fischer: Lawrence Berkeley National Laboratory
Alex Zettl: Lawrence Berkeley National Laboratory
Pascal Ruffieux: Empa, Swiss Federal Laboratories for Materials Science and Technology
Eli Yablonovitch: University of California
Michael Crommie: Lawrence Berkeley National Laboratory
Roman Fasel: Empa, Swiss Federal Laboratories for Materials Science and Technology
Jeffrey Bokor: University of California

Nature Communications, 2017, vol. 8, issue 1, 1-6

Abstract: Abstract Bottom-up synthesized graphene nanoribbons and graphene nanoribbon heterostructures have promising electronic properties for high-performance field-effect transistors and ultra-low power devices such as tunneling field-effect transistors. However, the short length and wide band gap of these graphene nanoribbons have prevented the fabrication of devices with the desired performance and switching behavior. Here, by fabricating short channel (L ch ~ 20 nm) devices with a thin, high-κ gate dielectric and a 9-atom wide (0.95 nm) armchair graphene nanoribbon as the channel material, we demonstrate field-effect transistors with high on-current (I on > 1 μA at V d = −1 V) and high I on /I off ~ 105 at room temperature. We find that the performance of these devices is limited by tunneling through the Schottky barrier at the contacts and we observe an increase in the transparency of the barrier by increasing the gate field near the contacts. Our results thus demonstrate successful fabrication of high-performance short-channel field-effect transistors with bottom-up synthesized armchair graphene nanoribbons.

Date: 2017
References: Add references at CitEc
Citations:

Downloads: (external link)
https://www.nature.com/articles/s41467-017-00734-x Abstract (text/html)

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:nat:natcom:v:8:y:2017:i:1:d:10.1038_s41467-017-00734-x

Ordering information: This journal article can be ordered from
https://www.nature.com/ncomms/

DOI: 10.1038/s41467-017-00734-x

Access Statistics for this article

Nature Communications is currently edited by Nathalie Le Bot, Enda Bergin and Fiona Gillespie

More articles in Nature Communications from Nature
Bibliographic data for series maintained by Sonal Shukla () and Springer Nature Abstracting and Indexing ().