Room-temperature 2D semiconductor activated vertical-cavity surface-emitting lasers

Jingzhi Shang, Chunxiao Cong, Zilong Wang, Namphung Peimyoo, Lishu Wu, Chenji Zou, Yu Chen, Xin Yu Chin, Jianpu Wang, Cesare Soci, Wei Huang () and Ting Yu ()
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Jingzhi Shang: Nanjing Tech University
Chunxiao Cong: Fudan University
Zilong Wang: Nanyang Technological University
Namphung Peimyoo: Nanyang Technological University
Lishu Wu: Nanyang Technological University
Chenji Zou: Nanyang Technological University
Yu Chen: Nanyang Technological University
Xin Yu Chin: Nanyang Technological University
Jianpu Wang: Nanjing Tech University (NanjingTech)
Cesare Soci: Nanyang Technological University
Wei Huang: Nanjing Tech University (NanjingTech)
Ting Yu: Nanyang Technological University

Nature Communications, 2017, vol. 8, issue 1, 1-7

Abstract: Abstract Two-dimensional (2D) semiconductors are opening a new platform for revitalizing widely spread optoelectronic applications. The realisation of room-temperature vertical 2D lasing from monolayer semiconductors is fundamentally interesting and highly desired for appealing on-chip laser applications such as optical interconnects and supercomputing. Here, we present room-temperature low-threshold lasing from 2D semiconductor activated vertical-cavity surface-emitting lasers (VCSELs) under continuous-wave pumping. 2D lasing is achieved from a 2D semiconductor. Structurally, dielectric oxides were used to construct the half-wavelength-thick cavity and distributed Bragg reflectors, in favour of single-mode operation and ultralow optical loss; in the cavity centre, the direct-bandgap monolayer WS2 was embedded as the gain medium, compatible with the planar VCSEL configuration and the monolithic integration technology. This work demonstrates 2D semiconductor activated VCSELs with desirable emission characteristics, which represents a major step towards practical optoelectronic applications of 2D semiconductor lasers.

Date: 2017
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DOI: 10.1038/s41467-017-00743-w

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