Physical origins of current and temperature controlled negative differential resistances in NbO2

Suhas Kumar (), Ziwen Wang, Noraica Davila, Niru Kumari, Kate J. Norris, Xiaopeng Huang, John Paul Strachan, David Vine, A.L. David Kilcoyne, Yoshio Nishi and R. Stanley Williams ()
Additional contact information
Suhas Kumar: Hewlett Packard Labs
Ziwen Wang: Stanford University
Noraica Davila: Hewlett Packard Labs
Niru Kumari: Hewlett Packard Labs
Kate J. Norris: Hewlett Packard Labs
Xiaopeng Huang: Hewlett Packard Labs
John Paul Strachan: Hewlett Packard Labs
David Vine: Lawrence Berkeley National Laboratory
A.L. David Kilcoyne: Lawrence Berkeley National Laboratory
Yoshio Nishi: Stanford University
R. Stanley Williams: Hewlett Packard Labs

Nature Communications, 2017, vol. 8, issue 1, 1-6

Abstract: Abstract Negative differential resistance behavior in oxide memristors, especially those using NbO2, is gaining renewed interest because of its potential utility in neuromorphic computing. However, there has been a decade-long controversy over whether the negative differential resistance is caused by a relatively low-temperature non-linear transport mechanism or a high-temperature Mott transition. Resolving this issue will enable consistent and robust predictive modeling of this phenomenon for different applications. Here we examine NbO2 memristors that exhibit both a current-controlled and a temperature-controlled negative differential resistance. Through thermal and chemical spectromicroscopy and numerical simulations, we confirm that the former is caused by a ~400 K non-linear-transport-driven instability and the latter is caused by the ~1000 K Mott metal-insulator transition, for which the thermal conductance counter-intuitively decreases in the metallic state relative to the insulating state.

Date: 2017
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DOI: 10.1038/s41467-017-00773-4

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