Crossing the threshold of ultrafast laser writing in bulk silicon

Margaux Chanal, Vladimir Yu. Fedorov, Maxime Chambonneau, Raphaël Clady, Stelios Tzortzakis () and David Grojo ()
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Margaux Chanal: Aix-Marseille University
Vladimir Yu. Fedorov: Texas A&M University at Qatar
Maxime Chambonneau: Aix-Marseille University
Raphaël Clady: Aix-Marseille University
Stelios Tzortzakis: Texas A&M University at Qatar
David Grojo: Aix-Marseille University

Nature Communications, 2017, vol. 8, issue 1, 1-6

Abstract: Abstract An important challenge in the field of three-dimensional ultrafast laser processing is to achieve permanent modifications in the bulk of silicon and narrow-gap materials. Recent attempts by increasing the energy of infrared ultrashort pulses have simply failed. Here, we establish that it is because focusing with a maximum numerical aperture of about 1.5 with conventional schemes does not allow overcoming strong nonlinear and plasma effects in the pre-focal region. We circumvent this limitation by exploiting solid-immersion focusing, in analogy to techniques applied in advanced microscopy and lithography. By creating the conditions for an interaction with an extreme numerical aperture near 3 in a perfect spherical sample, repeatable femtosecond optical breakdown and controllable refractive index modifications are achieved inside silicon. This opens the door to the direct writing of three-dimensional monolithic devices for silicon photonics. It also provides perspectives for new strong-field physics and warm-dense-matter plasma experiments.

Date: 2017
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DOI: 10.1038/s41467-017-00907-8

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