Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistor

Xiao-Xi Li, Zhi-Qiang Fan, Pei-Zhi Liu, Mao-Lin Chen, Xin Liu, Chuan-Kun Jia, Dong-Ming Sun (), Xiang-Wei Jiang (), Zheng Han (), Vincent Bouchiat, Jun-Jie Guo, Jian-Hao Chen and Zhi-Dong Zhang
Additional contact information
Xiao-Xi Li: Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences
Zhi-Qiang Fan: State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences
Pei-Zhi Liu: Taiyuan University of Technology
Mao-Lin Chen: Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences
Xin Liu: Peking University
Chuan-Kun Jia: Changsha University of Science & Technology
Dong-Ming Sun: Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences
Xiang-Wei Jiang: State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences
Zheng Han: Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences
Vincent Bouchiat: University of Grenoble Alpes, CNRS, Institut Néel
Jun-Jie Guo: Taiyuan University of Technology
Jian-Hao Chen: Peking University
Zhi-Dong Zhang: Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences

Nature Communications, 2017, vol. 8, issue 1, 1-7

Abstract: Abstract Atomically thin two-dimensional semiconducting materials integrated into van der Waals heterostructures have enabled architectures that hold great promise for next generation nanoelectronics. However, challenges still remain to enable their applications as compliant materials for integration in logic devices. Here, we devise a reverted stacking technique to intercalate a wrinkle-free boron nitride tunnel layer between MoS2 channel and source drain electrodes. Vertical tunnelling of electrons therefore makes it possible to suppress the Schottky barriers and Fermi level pinning, leading to homogeneous gate-control of the channel chemical potential across the bandgap edges. The observed features of ambipolar pn to np diode, which can be reversibly gate tuned, paves the way for future logic applications and high performance switches based on atomically thin semiconducting channel.

Date: 2017
References: Add references at CitEc
Citations: View citations in EconPapers (3)

Downloads: (external link)
https://www.nature.com/articles/s41467-017-01128-9 Abstract (text/html)

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:nat:natcom:v:8:y:2017:i:1:d:10.1038_s41467-017-01128-9

Ordering information: This journal article can be ordered from
https://www.nature.com/ncomms/

DOI: 10.1038/s41467-017-01128-9

Access Statistics for this article

Nature Communications is currently edited by Nathalie Le Bot, Enda Bergin and Fiona Gillespie

More articles in Nature Communications from Nature
Bibliographic data for series maintained by Sonal Shukla () and Springer Nature Abstracting and Indexing ().