Fully inkjet-printed two-dimensional material field-effect heterojunctions for wearable and textile electronics

Tian Carey, Stefania Cacovich, Giorgio Divitini, Jiesheng Ren, Aida Mansouri, Jong M. Kim, Chaoxia Wang, Caterina Ducati, Roman Sordan and Felice Torrisi ()
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Tian Carey: University of Cambridge
Stefania Cacovich: University of Cambridge
Giorgio Divitini: University of Cambridge
Jiesheng Ren: University of Cambridge
Aida Mansouri: Politecnico di Milano
Jong M. Kim: University of Cambridge
Chaoxia Wang: Jiangnan University
Caterina Ducati: University of Cambridge
Roman Sordan: Politecnico di Milano
Felice Torrisi: University of Cambridge

Nature Communications, 2017, vol. 8, issue 1, 1-11

Abstract: Abstract Fully printed wearable electronics based on two-dimensional (2D) material heterojunction structures also known as heterostructures, such as field-effect transistors, require robust and reproducible printed multi-layer stacks consisting of active channel, dielectric and conductive contact layers. Solution processing of graphite and other layered materials provides low-cost inks enabling printed electronic devices, for example by inkjet printing. However, the limited quality of the 2D-material inks, the complexity of the layered arrangement, and the lack of a dielectric 2D-material ink able to operate at room temperature, under strain and after several washing cycles has impeded the fabrication of electronic devices on textile with fully printed 2D heterostructures. Here we demonstrate fully inkjet-printed 2D-material active heterostructures with graphene and hexagonal-boron nitride (h-BN) inks, and use them to fabricate all inkjet-printed flexible and washable field-effect transistors on textile, reaching a field-effect mobility of ~91 cm2 V−1 s−1, at low voltage (

Date: 2017
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DOI: 10.1038/s41467-017-01210-2

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