Room temperature magnetization switching in topological insulator-ferromagnet heterostructures by spin-orbit torques

Yi Wang, Dapeng Zhu, Yang Wu, Yumeng Yang, Jiawei Yu, Rajagopalan Ramaswamy, Rahul Mishra, Shuyuan Shi, Mehrdad Elyasi, Kie-Leong Teo, Yihong Wu and Hyunsoo Yang ()
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Yi Wang: National University of Singapore
Dapeng Zhu: National University of Singapore
Yang Wu: National University of Singapore
Yumeng Yang: National University of Singapore
Jiawei Yu: National University of Singapore
Rajagopalan Ramaswamy: National University of Singapore
Rahul Mishra: National University of Singapore
Shuyuan Shi: National University of Singapore
Mehrdad Elyasi: National University of Singapore
Kie-Leong Teo: National University of Singapore
Yihong Wu: National University of Singapore
Hyunsoo Yang: National University of Singapore

Nature Communications, 2017, vol. 8, issue 1, 1-6

Abstract: Abstract Topological insulators with spin-momentum-locked topological surface states are expected to exhibit a giant spin-orbit torque in the topological insulator/ferromagnet systems. To date, the topological insulator spin-orbit torque-driven magnetization switching is solely reported in a Cr-doped topological insulator at 1.9 K. Here we directly show giant spin-orbit torque-driven magnetization switching in a Bi2Se3/NiFe heterostructure at room temperature captured using a magneto-optic Kerr effect microscope. We identify a large charge-to-spin conversion efficiency of ~1–1.75 in the thin Bi2Se3 films, where the topological surface states are dominant. In addition, we find the current density required for the magnetization switching is extremely low, ~6 × 105 A cm–2, which is one to two orders of magnitude smaller than that with heavy metals. Our demonstration of room temperature magnetization switching of a conventional 3d ferromagnet using Bi2Se3 may lead to potential innovations in topological insulator-based spintronic applications.

Date: 2017
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DOI: 10.1038/s41467-017-01583-4

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