A two-dimensional Fe-doped SnS2 magnetic semiconductor

Bo Li, Tao Xing, Mianzeng Zhong, Le Huang, Na Lei, Jun Zhang, Jingbo Li and Zhongming Wei ()
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Bo Li: University of Chinese Academy of Sciences
Tao Xing: Beihang University
Mianzeng Zhong: University of Chinese Academy of Sciences
Le Huang: Guangdong University of Technology
Na Lei: Beihang University
Jun Zhang: University of Chinese Academy of Sciences
Jingbo Li: University of Chinese Academy of Sciences
Zhongming Wei: University of Chinese Academy of Sciences

Nature Communications, 2017, vol. 8, issue 1, 1-7

Abstract: Abstract Magnetic two-dimensional materials have attracted considerable attention for their significant potential application in spintronics. In this study, we present a high-quality Fe-doped SnS2 monolayer exfoliated using a micromechanical cleavage method. Fe atoms were doped at the Sn atom sites, and the Fe contents are ∼2.1%, 1.5%, and 1.1%. The field-effect transistors based on the Fe0.021Sn0.979S2 monolayer show n-type behavior and exhibit high optoelectronic performance. Magnetic measurements show that pure SnS2 is diamagnetic, whereas Fe0.021Sn0.979S2 exhibits ferromagnetic behavior with a perpendicular anisotropy at 2 K and a Curie temperature of ~31 K. Density functional theory calculations show that long-range ferromagnetic ordering in the Fe-doped SnS2 monolayer is energetically stable, and the estimated Curie temperature agrees well with the results of our experiment. The results suggest that Fe-doped SnS2 has significant potential in future nanoelectronic, magnetic, and optoelectronic applications.

Date: 2017
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DOI: 10.1038/s41467-017-02077-z

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