Reproducible flaws unveil electrostatic aspects of semiconductor electrochemistry

Yan B. Vogel, Long Zhang, Nadim Darwish, Vinicius R. Gonçales, Anton Le Brun, J. Justin Gooding, Angela Molina, Gordon G. Wallace, Michelle L. Coote, Joaquin Gonzalez () and Simone Ciampi ()
Additional contact information
Yan B. Vogel: Curtin University
Long Zhang: Curtin University
Nadim Darwish: Curtin University
Vinicius R. Gonçales: The University of New South Wales
Anton Le Brun: Australian Nuclear Science and Technology Organization (ANSTO)
J. Justin Gooding: The University of New South Wales
Angela Molina: Universidad de Murcia
Gordon G. Wallace: University of Wollongong
Michelle L. Coote: Australian National University
Joaquin Gonzalez: Universidad de Murcia
Simone Ciampi: Curtin University

Nature Communications, 2017, vol. 8, issue 1, 1-9

Abstract: Abstract Predicting or manipulating charge-transfer at semiconductor interfaces, from molecular electronics to energy conversion, relies on knowledge generated from a kinetic analysis of the electrode process, as provided by cyclic voltammetry. Scientists and engineers encountering non-ideal shapes and positions in voltammograms are inclined to reject these as flaws. Here we show that non-idealities of redox probes confined at silicon electrodes, namely full width at half maximum

Date: 2017
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DOI: 10.1038/s41467-017-02091-1

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