Quantum Hall states observed in thin films of Dirac semimetal Cd3As2

Masaki Uchida (), Yusuke Nakazawa, Shinichi Nishihaya, Kazuto Akiba, Markus Kriener, Yusuke Kozuka, Atsushi Miyake, Yasujiro Taguchi, Masashi Tokunaga, Naoto Nagaosa, Yoshinori Tokura and Masashi Kawasaki
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Masaki Uchida: the University of Tokyo
Yusuke Nakazawa: the University of Tokyo
Shinichi Nishihaya: the University of Tokyo
Kazuto Akiba: the University of Tokyo
Markus Kriener: RIKEN Center for Emergent Matter Science (CEMS)
Yusuke Kozuka: the University of Tokyo
Atsushi Miyake: the University of Tokyo
Yasujiro Taguchi: RIKEN Center for Emergent Matter Science (CEMS)
Masashi Tokunaga: the University of Tokyo
Naoto Nagaosa: the University of Tokyo
Yoshinori Tokura: the University of Tokyo
Masashi Kawasaki: the University of Tokyo

Nature Communications, 2017, vol. 8, issue 1, 1-7

Abstract: Abstract A well known semiconductor Cd3As2 has reentered the spotlight due to its unique electronic structure and quantum transport phenomena as a topological Dirac semimetal. For elucidating and controlling its topological quantum state, high-quality Cd3As2 thin films have been highly desired. Here we report the development of an elaborate growth technique of high-crystallinity and high-mobility Cd3As2 films with controlled thicknesses and the observation of quantum Hall effect dependent on the film thickness. With decreasing the film thickness to 10 nm, the quantum Hall states exhibit variations such as a change in the spin degeneracy reflecting the Dirac dispersion with a large Fermi velocity. Details of the electronic structure including subband splitting and gap opening are identified from the quantum transport depending on the confinement thickness, suggesting the presence of a two-dimensional topological insulating phase. The demonstration of quantum Hall states in our high-quality Cd3As2 films paves a road to study quantum transport and device application in topological Dirac semimetal and its derivative phases.

Date: 2017
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DOI: 10.1038/s41467-017-02423-1

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