Strong modulation of second-harmonic generation with very large contrast in semiconducting CdS via high-field domain

Ming-Liang Ren, Jacob S. Berger, Wenjing Liu, Gerui Liu and Ritesh Agarwal ()
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Ming-Liang Ren: University of Pennsylvania
Jacob S. Berger: University of Pennsylvania
Wenjing Liu: University of Pennsylvania
Gerui Liu: University of Pennsylvania
Ritesh Agarwal: University of Pennsylvania

Nature Communications, 2018, vol. 9, issue 1, 1-8

Abstract: Abstract Dynamic control of nonlinear signals is critical for a wide variety of optoelectronic applications, such as signal processing for optical computing. However, controlling nonlinear optical signals with large modulation strengths and near-perfect contrast remains a challenging problem due to intrinsic second-order nonlinear coefficients via bulk or surface contributions. Here, via electrical control, we turn on and tune second-order nonlinear coefficients in semiconducting CdS nanobelts from zero to up to 151 pm V−1, a value higher than other intrinsic nonlinear coefficients in CdS. We also observe ultrahigh ON/OFF ratio of >104 and modulation strengths ~200% V−1 of the nonlinear signal. The unusual nonlinear behavior, including super-quadratic voltage and power dependence, is ascribed to the high-field domain, which can be further controlled by near-infrared optical excitation and electrical gating. The ability to electrically control nonlinear optical signals in nanostructures can enable optoelectronic devices such as optical transistors and modulators for on-chip integrated photonics.

Date: 2018
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DOI: 10.1038/s41467-017-02548-3

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