Deep level transient spectroscopic investigation of phosphorus-doped silicon by self-assembled molecular monolayers

Xuejiao Gao, Bin Guan, Abdelmadjid Mesli, Kaixiang Chen and Yaping Dan ()
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Xuejiao Gao: Shanghai Jiao Tong University
Bin Guan: Shanghai Jiao Tong University
Abdelmadjid Mesli: Université Aix-Marseille
Kaixiang Chen: Shanghai Jiao Tong University
Yaping Dan: Shanghai Jiao Tong University

Nature Communications, 2018, vol. 9, issue 1, 1-10

Abstract: Abstract It is known that self-assembled molecular monolayer doping technique has the advantages of forming ultra-shallow junctions and introducing minimal defects in semiconductors. In this paper, we report however the formation of carbon-related defects in the molecular monolayer-doped silicon as detected by deep-level transient spectroscopy and low-temperature Hall measurements. The molecular monolayer doping process is performed by modifying silicon substrate with phosphorus-containing molecules and annealing at high temperature. The subsequent rapid thermal annealing drives phosphorus dopants along with carbon contaminants into the silicon substrate, resulting in a dramatic decrease of sheet resistance for the intrinsic silicon substrate. Low-temperature Hall measurements and secondary ion mass spectrometry indicate that phosphorus is the only electrically active dopant after the molecular monolayer doping. However, during this process, at least 20% of the phosphorus dopants are electrically deactivated. The deep-level transient spectroscopy shows that carbon-related defects are responsible for such deactivation.

Date: 2018
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DOI: 10.1038/s41467-017-02564-3

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