Defects controlled hole doping and multivalley transport in SnSe single crystals

Zhen Wang, Congcong Fan, Zhixuan Shen, Chenqiang Hua, Qifeng Hu, Feng Sheng, Yunhao Lu, Hanyan Fang, Zhizhan Qiu, Jiong Lu, Zhengtai Liu, Wanling Liu, Yaobo Huang, Zhu-An Xu, D. W. Shen () and Yi Zheng ()
Additional contact information
Zhen Wang: Zhejiang University
Congcong Fan: Chinese Academy of Sciences
Zhixuan Shen: Zhejiang University
Chenqiang Hua: Zhejiang University
Qifeng Hu: Zhejiang University
Feng Sheng: Zhejiang University
Yunhao Lu: Zhejiang University
Hanyan Fang: National University of Singapore
Zhizhan Qiu: National University of Singapore
Jiong Lu: National University of Singapore
Zhengtai Liu: Chinese Academy of Sciences
Wanling Liu: Chinese Academy of Sciences
Yaobo Huang: Chinese Academy of Science
Zhu-An Xu: Zhejiang University
D. W. Shen: Chinese Academy of Sciences
Yi Zheng: Zhejiang University

Nature Communications, 2018, vol. 9, issue 1, 1-9

Abstract: Abstract SnSe is a promising thermoelectric material with record-breaking figure of merit. However, to date a comprehensive understanding of the electronic structure and most critically, the self-hole-doping mechanism in SnSe is still absent. Here we report the highly anisotropic electronic structure of SnSe investigated by angle-resolved photoemission spectroscopy, in which a unique pudding-mould-shaped valence band with quasi-linear energy dispersion is revealed. We prove that p-type doping in SnSe is extrinsically controlled by local phase segregation of SnSe2 microdomains via interfacial charge transferring. The multivalley nature of the pudding-mould band is manifested in quantum transport by crystallographic axis-dependent weak localisation and exotic non-saturating negative magnetoresistance. Strikingly, quantum oscillations also reveal 3D Fermi surface with unusual interlayer coupling strength in p-SnSe, in which individual monolayers are interwoven by peculiar point dislocation defects. Our results suggest that defect engineering may provide versatile routes in improving the thermoelectric performance of the SnSe family.

Date: 2018
References: Add references at CitEc
Citations: View citations in EconPapers (2)

Downloads: (external link)
https://www.nature.com/articles/s41467-017-02566-1 Abstract (text/html)

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:nat:natcom:v:9:y:2018:i:1:d:10.1038_s41467-017-02566-1

Ordering information: This journal article can be ordered from
https://www.nature.com/ncomms/

DOI: 10.1038/s41467-017-02566-1

Access Statistics for this article

Nature Communications is currently edited by Nathalie Le Bot, Enda Bergin and Fiona Gillespie

More articles in Nature Communications from Nature
Bibliographic data for series maintained by Sonal Shukla () and Springer Nature Abstracting and Indexing ().