Room temperature magneto-optic effect in silicon light-emitting diodes

F. Chiodi, S. L. Bayliss, L. Barast, D. Débarre, H. Bouchiat, R. H. Friend and A. D. Chepelianskii ()
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F. Chiodi: CNRS, Univ. Paris-Sud, Université Paris-Saclay, C2N-Orsay
S. L. Bayliss: CNRS, Univ. Paris-Sud, Université Paris-Saclay, LPS-Orsay
L. Barast: CNRS, Univ. Paris-Sud, Université Paris-Saclay, C2N-Orsay
D. Débarre: CNRS, Univ. Paris-Sud, Université Paris-Saclay, LPS-Orsay
H. Bouchiat: CNRS, Univ. Paris-Sud, Université Paris-Saclay, LPS-Orsay
R. H. Friend: University of Cambridge
A. D. Chepelianskii: CNRS, Univ. Paris-Sud, Université Paris-Saclay, LPS-Orsay

Nature Communications, 2018, vol. 9, issue 1, 1-7

Abstract: Abstract In weakly spin–orbit coupled materials, the spin-selective nature of recombination can give rise to large magnetic-field effects, e.g. on the electro-luminescence of molecular semiconductors. Although silicon has weak spin–orbit coupling, observing spin-dependent recombination through magneto-electroluminescence is challenging: silicon’s indirect band-gap causes an inefficient emission and it is difficult to separate spin-dependent phenomena from classical magneto-resistance effects. Here we overcome these challenges and measure magneto-electroluminescence in silicon light-emitting diodes fabricated via gas immersion laser doping. These devices allow us to achieve efficient emission while retaining a well-defined geometry, thus suppressing classical magnetoresistance effects to a few percent. We find that electroluminescence can be enhanced by up to 300% near room temperature in a seven Tesla magnetic field, showing that the control of the spin degree of freedom can have a strong impact on the efficiency of silicon LEDs.

Date: 2018
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DOI: 10.1038/s41467-017-02804-6

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