Publisher Correction: Ballistic geometric resistance resonances in a single surface of a topological insulator

Hubert Maier, Johannes Ziegler, Ralf Fischer, Dmitriy Kozlov, Ze Don Kvon, Nikolay Mikhailov, Sergey A. Dvoretsky and Dieter Weiss ()
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Hubert Maier: University of Regensburg
Johannes Ziegler: University of Regensburg
Ralf Fischer: University of Regensburg
Dmitriy Kozlov: A.V. Rzhanov Institute of Semiconductor Physics
Ze Don Kvon: A.V. Rzhanov Institute of Semiconductor Physics
Nikolay Mikhailov: A.V. Rzhanov Institute of Semiconductor Physics
Sergey A. Dvoretsky: A.V. Rzhanov Institute of Semiconductor Physics
Dieter Weiss: University of Regensburg

Nature Communications, 2018, vol. 9, issue 1, 1-1

Abstract: In the original version of this Article, the second and third sentences of the first paragraph of the “Gate voltage and antidot period dependencies” section of the Results originally incorrectly read “The characteristic evolution of the sheet resistance ρ□=ρ□ (B=0) with Vg shown for three antidot samples and an unpatterned reference sample in Fig. 3a. The maxima of ρxx, located between Vg~0.5 and 1 V, reflect the charge neutrality point (CNP), corresponding to an EF position located slightly in the valence band (see band structure in Fig. 3b).” In the corrected version, “ $${\mathrm{\rho }}_\square = {\mathrm{\rho }}_\square (B = 0)$$ ρ □ = ρ □ ( B = 0 ) ” is replaced by “ $${\mathrm{\rho }}_\square = {\mathrm{\rho }}_{{\mathrm{xx}}}(B = 0)$$ ρ □ = ρ xx ( B = 0 ) ”, and “The maxima of $${\mathrm{\rho }}_{{\mathrm{xx}}}$$ ρ xx ” is replaced by “The maxima of $${\mathrm{\rho }}_\square$$ ρ □ ”.

Date: 2018
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DOI: 10.1038/s41467-018-02964-z

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