Spectroscopy of bulk and few-layer superconducting NbSe2 with van der Waals tunnel junctions

T. Dvir, F. Massee, L. Attias, M. Khodas, M. Aprili, C. H. L. Quay and H. Steinberg ()
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T. Dvir: The Hebrew University of Jerusalem
F. Massee: Université Paris-Sud/Université Paris-Saclay
L. Attias: The Hebrew University of Jerusalem
M. Khodas: The Hebrew University of Jerusalem
M. Aprili: Université Paris-Sud/Université Paris-Saclay
C. H. L. Quay: Université Paris-Sud/Université Paris-Saclay
H. Steinberg: The Hebrew University of Jerusalem

Nature Communications, 2018, vol. 9, issue 1, 1-6

Abstract: Abstract Tunnel junctions, an established platform for high resolution spectroscopy of superconductors, require defect-free insulating barriers; however, oxides, the most common barrier, can only grow on a limited selection of materials. We show that van der Waals tunnel barriers, fabricated by exfoliation and transfer of layered semiconductors, sustain stable currents with strong suppression of sub-gap tunneling. This allows us to measure the spectra of bulk (20 nm) and ultrathin (3- and 4-layer) NbSe2 devices at 70 mK. These exhibit two distinct superconducting gaps, the larger of which decreases monotonically with thickness and critical temperature. The spectra are analyzed using a two-band model incorporating depairing. In the bulk, the smaller gap exhibits strong depairing in in-plane magnetic fields, consistent with high out-of-plane Fermi velocity. In the few-layer devices, the large gap exhibits negligible depairing, consistent with out-of-plane spin locking due to Ising spin–orbit coupling. In the 3-layer device, the large gap persists beyond the Pauli limit.

Date: 2018
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DOI: 10.1038/s41467-018-03000-w

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