Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance

Mengxing Wang, Wenlong Cai, Kaihua Cao, Jiaqi Zhou, Jerzy Wrona, Shouzhong Peng, Huaiwen Yang, Jiaqi Wei, Wang Kang, Youguang Zhang, Jürgen Langer, Berthold Ocker, Albert Fert and Weisheng Zhao ()
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Mengxing Wang: Beihang University
Wenlong Cai: Beihang University
Kaihua Cao: Beihang University
Jiaqi Zhou: Beihang University
Jerzy Wrona: Singulus Technologies
Shouzhong Peng: Beihang University
Huaiwen Yang: Beihang University
Jiaqi Wei: Beihang University
Wang Kang: Beihang University
Youguang Zhang: Beihang University
Jürgen Langer: Singulus Technologies
Berthold Ocker: Singulus Technologies
Albert Fert: Beihang University
Weisheng Zhao: Beihang University

Nature Communications, 2018, vol. 9, issue 1, 1-7

Abstract: Abstract Perpendicular magnetic tunnel junctions based on MgO/CoFeB structures are of particular interest for magnetic random-access memories because of their excellent thermal stability, scaling potential, and power dissipation. However, the major challenge of current-induced switching in the nanopillars with both a large tunnel magnetoresistance ratio and a low junction resistance is still to be met. Here, we report spin transfer torque switching in nano-scale perpendicular magnetic tunnel junctions with a magnetoresistance ratio up to 249% and a resistance area product as low as 7.0 Ω µm2, which consists of atom-thick W layers and double MgO/CoFeB interfaces. The efficient resonant tunnelling transmission induced by the atom-thick W layers could contribute to the larger magnetoresistance ratio than conventional structures with Ta layers, in addition to the robustness of W layers against high-temperature diffusion during annealing. The critical switching current density could be lower than 3.0 MA cm−2 for devices with a 45-nm radius.

Date: 2018
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DOI: 10.1038/s41467-018-03140-z

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