Large-area and bright pulsed electroluminescence in monolayer semiconductors

Lien Der-Hsien, Matin Amani, Sujay B. Desai, Geun Ho Ahn, Kevin Han, Jr-Hau He, Joel W. Ager, Ming C. Wu and Ali Javey ()
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Lien Der-Hsien: University of California
Matin Amani: University of California
Sujay B. Desai: University of California
Geun Ho Ahn: University of California
Kevin Han: University of California
Jr-Hau He: King Abdullah University of Science & Technology
Joel W. Ager: Lawrence Berkeley National Laboratory
Ming C. Wu: University of California
Ali Javey: University of California

Nature Communications, 2018, vol. 9, issue 1, 1-7

Abstract: Abstract Transition-metal dichalcogenide monolayers have naturally terminated surfaces and can exhibit a near-unity photoluminescence quantum yield in the presence of suitable defect passivation. To date, steady-state monolayer light-emitting devices suffer from Schottky contacts or require complex heterostructures. We demonstrate a transient-mode electroluminescent device based on transition-metal dichalcogenide monolayers (MoS2, WS2, MoSe2, and WSe2) to overcome these problems. Electroluminescence from this dopant-free two-terminal device is obtained by applying an AC voltage between the gate and the semiconductor. Notably, the electroluminescence intensity is weakly dependent on the Schottky barrier height or polarity of the contact. We fabricate a monolayer seven-segment display and achieve the first transparent and bright millimeter-scale light-emitting monolayer semiconductor device.

Date: 2018
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DOI: 10.1038/s41467-018-03218-8

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