High-speed and on-chip graphene blackbody emitters for optical communications by remote heat transfer

Yusuke Miyoshi, Yusuke Fukazawa, Yuya Amasaka, Robin Reckmann, Tomoya Yokoi, Kazuki Ishida, Kenji Kawahara, Hiroki Ago and Hideyuki Maki ()
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Yusuke Miyoshi: Keio University
Yusuke Fukazawa: Keio University
Yuya Amasaka: Keio University
Robin Reckmann: Keio University
Tomoya Yokoi: Keio University
Kazuki Ishida: Keio University
Kenji Kawahara: Kyushu University
Hiroki Ago: Kyushu University
Hideyuki Maki: Keio University

Nature Communications, 2018, vol. 9, issue 1, 1-9

Abstract: Abstract High-speed light emitters integrated on silicon chips can enable novel architectures for silicon-based optoelectronics, such as on-chip optical interconnects, and silicon photonics. However, conventional light sources based on compound semiconductors face major challenges for their integration with a silicon-based platform because of their difficulty of direct growth on a silicon substrate. Here we report ultra-high-speed (100-ps response time), highly integrated graphene-based on-silicon-chip blackbody emitters in the near-infrared region including telecommunication wavelength. Their emission responses are strongly affected by the graphene contact with the substrate depending on the number of graphene layers. The ultra-high-speed emission can be understood by remote quantum thermal transport via surface polar phonons of the substrates. We demonstrated real-time optical communications, integrated two-dimensional array emitters, capped emitters operable in air, and the direct coupling of optical fibers to the emitters. These emitters can open new routes to on-Si-chip, small footprint, and high-speed emitters for highly integrated optoelectronics and silicon photonics.

Date: 2018
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DOI: 10.1038/s41467-018-03695-x

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