Two-dimensional electronic transport and surface electron accumulation in MoS2

M. D. Siao, W. C. Shen, R. S. Chen (), Z. W. Chang, M. C. Shih, Y. P. Chiu and C.-M. Cheng
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M. D. Siao: National Taiwan University of Science and Technology
W. C. Shen: National Taiwan University of Science and Technology
R. S. Chen: National Taiwan University of Science and Technology
Z. W. Chang: National Taiwan Normal University
M. C. Shih: National Taiwan University
Y. P. Chiu: National Taiwan Normal University
C.-M. Cheng: National Synchrotron Radiation Research Center

Nature Communications, 2018, vol. 9, issue 1, 1-12

Abstract: Abstract Because the surface-to-volume ratio of quasi-two-dimensional materials is extremely high, understanding their surface characteristics is crucial for practically controlling their intrinsic properties and fabricating p-type and n-type layered semiconductors. Van der Waals crystals are expected to have an inert surface because of the absence of dangling bonds. However, here we show that the surface of high-quality synthesized molybdenum disulfide (MoS2) is a major n-doping source. The surface electron concentration of MoS2 is nearly four orders of magnitude higher than that of its inner bulk. Substantial thickness-dependent conductivity in MoS2 nanoflakes was observed. The transfer length method suggested the current transport in MoS2 following a two-dimensional behavior rather than the conventional three-dimensional mode. Scanning tunneling microscopy and angle-resolved photoemission spectroscopy measurements confirmed the presence of surface electron accumulation in this layered material. Notably, the in situ-cleaved surface exhibited a nearly intrinsic state without electron accumulation.

Date: 2018
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DOI: 10.1038/s41467-018-03824-6

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