Emerging two-dimensional ferromagnetism in silicene materials

Andrey M. Tokmachev, Dmitry V. Averyanov, Oleg E. Parfenov, Alexander N. Taldenkov, Igor A. Karateev, Ivan S. Sokolov, Oleg A. Kondratev and Vyacheslav G. Storchak ()
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Andrey M. Tokmachev: National Research Centre “Kurchatov Institute”
Dmitry V. Averyanov: National Research Centre “Kurchatov Institute”
Oleg E. Parfenov: National Research Centre “Kurchatov Institute”
Alexander N. Taldenkov: National Research Centre “Kurchatov Institute”
Igor A. Karateev: National Research Centre “Kurchatov Institute”
Ivan S. Sokolov: National Research Centre “Kurchatov Institute”
Oleg A. Kondratev: National Research Centre “Kurchatov Institute”
Vyacheslav G. Storchak: National Research Centre “Kurchatov Institute”

Nature Communications, 2018, vol. 9, issue 1, 1-9

Abstract: Abstract The appeal of ultra-compact spintronics drives intense research on magnetism in low-dimensional materials. Recent years have witnessed remarkable progress in engineering two-dimensional (2D) magnetism via defects, edges, adatoms, and magnetic proximity. However, intrinsic 2D ferromagnetism remained elusive until recent discovery of out-of-plane magneto-optical response in Cr-based layers, stimulating the search for 2D magnets with tunable and diverse properties. Here we employ a bottom-up approach to produce layered structures of silicene (a Si counterpart of graphene) functionalized by rare-earth atoms, ranging from the bulk down to one monolayer. We track the evolution from the antiferromagnetism of the bulk to intrinsic 2D in-plane ferromagnetism of ultrathin layers, with its characteristic dependence of the transition temperature on low magnetic fields. The emerging ferromagnetism manifests itself in the electron transport. The discovery of a class of robust 2D magnets, compatible with the mature Si technology, is instrumental for engineering new devices and understanding spin phenomena.

Date: 2018
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DOI: 10.1038/s41467-018-04012-2

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