Giant energy density and high efficiency achieved in bismuth ferrite-based film capacitors via domain engineering

Hao Pan, Jing Ma, Ji Ma, Qinghua Zhang, Xiaozhi Liu, Bo Guan, Lin Gu, Xin Zhang, Yu-Jun Zhang, Liangliang Li, Yang Shen, Yuan-Hua Lin () and Ce-Wen Nan
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Hao Pan: Tsinghua University
Jing Ma: Tsinghua University
Ji Ma: Tsinghua University
Qinghua Zhang: Chinese Academy of Sciences
Xiaozhi Liu: Chinese Academy of Sciences
Bo Guan: Chinese Academy of Sciences
Lin Gu: Chinese Academy of Sciences
Xin Zhang: Tsinghua University
Yu-Jun Zhang: Tsinghua University
Liangliang Li: Tsinghua University
Yang Shen: Tsinghua University
Yuan-Hua Lin: Tsinghua University
Ce-Wen Nan: Tsinghua University

Nature Communications, 2018, vol. 9, issue 1, 1-8

Abstract: Abstract Developing high-performance film dielectrics for capacitive energy storage has been a great challenge for modern electrical devices. Despite good results obtained in lead titanate-based dielectrics, lead-free alternatives are strongly desirable due to environmental concerns. Here we demonstrate that giant energy densities of ~70 J cm−3, together with high efficiency as well as excellent cycling and thermal stability, can be achieved in lead-free bismuth ferrite-strontium titanate solid-solution films through domain engineering. It is revealed that the incorporation of strontium titanate transforms the ferroelectric micro-domains of bismuth ferrite into highly-dynamic polar nano-regions, resulting in a ferroelectric to relaxor-ferroelectric transition with concurrently improved energy density and efficiency. Additionally, the introduction of strontium titanate greatly improves the electrical insulation and breakdown strength of the films by suppressing the formation of oxygen vacancies. This work opens up a feasible and propagable route, i.e., domain engineering, to systematically develop new lead-free dielectrics for energy storage.

Date: 2018
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DOI: 10.1038/s41467-018-04189-6

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