A silicon metal-oxide-semiconductor electron spin-orbit qubit

Ryan M. Jock (), N. Tobias Jacobson, Patrick Harvey-Collard, Andrew M. Mounce, Vanita Srinivasa, Dan R. Ward, John Anderson, Ron Manginell, Joel R. Wendt, Martin Rudolph, Tammy Pluym, John King Gamble, Andrew D. Baczewski, Wayne M. Witzel and Malcolm S. Carroll ()
Additional contact information
Ryan M. Jock: Sandia National Laboratories
N. Tobias Jacobson: Sandia National Laboratories
Patrick Harvey-Collard: Sandia National Laboratories
Andrew M. Mounce: Sandia National Laboratories
Vanita Srinivasa: Sandia National Laboratories
Dan R. Ward: Sandia National Laboratories
John Anderson: Sandia National Laboratories
Ron Manginell: Sandia National Laboratories
Joel R. Wendt: Sandia National Laboratories
Martin Rudolph: Sandia National Laboratories
Tammy Pluym: Sandia National Laboratories
John King Gamble: Sandia National Laboratories
Andrew D. Baczewski: Sandia National Laboratories
Wayne M. Witzel: Sandia National Laboratories
Malcolm S. Carroll: Sandia National Laboratories

Nature Communications, 2018, vol. 9, issue 1, 1-8

Abstract: Abstract The silicon metal-oxide-semiconductor (MOS) material system is a technologically important implementation of spin-based quantum information processing. However, the MOS interface is imperfect leading to concerns about 1/f trap noise and variability in the electron g-factor due to spin–orbit (SO) effects. Here we advantageously use interface–SO coupling for a critical control axis in a double-quantum-dot singlet–triplet qubit. The magnetic field-orientation dependence of the g-factors is consistent with Rashba and Dresselhaus interface–SO contributions. The resulting all-electrical, two-axis control is also used to probe the MOS interface noise. The measured inhomogeneous dephasing time, $$T_{{\mathrm{2m}}}^ \star$$ T 2m ⋆ , of 1.6 μs is consistent with 99.95% 28Si enrichment. Furthermore, when tuned to be sensitive to exchange fluctuations, a quasi-static charge noise detuning variance of 2 μeV is observed, competitive with low-noise reports in other semiconductor qubits. This work, therefore, demonstrates that the MOS interface inherently provides properties for two-axis qubit control, while not increasing noise relative to other material choices.

Date: 2018
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DOI: 10.1038/s41467-018-04200-0

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