Ambipolar ferromagnetism by electrostatic doping of a manganite

L. M. Zheng, X. Renshaw Wang (), W. M. Lü (), C. J. Li, T. R. Paudel, Z. Q. Liu, Z. Huang, S. W. Zeng, Kun Han, Z. H. Chen, X. P. Qiu, M. S. Li, Shize Yang, B. Yang, Matthew F. Chisholm, L. W. Martin, S. J. Pennycook, E. Y. Tsymbal, J. M. D. Coey and W. W. Cao
Additional contact information
L. M. Zheng: Harbin Institute of Technology
X. Renshaw Wang: Nanyang Technological University
W. M. Lü: Harbin Institute of Technology
C. J. Li: National University of Singapore
T. R. Paudel: University of Nebraska
Z. Q. Liu: Beihang University
Z. Huang: National University of Singapore
S. W. Zeng: National University of Singapore
Kun Han: National University of Singapore
Z. H. Chen: University of California, Berkeley
X. P. Qiu: Tongji University
M. S. Li: National University of Singapore
Shize Yang: Materials Science and Technology Division, Oak Ridge National Laboratory
B. Yang: Harbin Institute of Technology
Matthew F. Chisholm: Materials Science and Technology Division, Oak Ridge National Laboratory
L. W. Martin: University of California, Berkeley
S. J. Pennycook: National University of Singapore
E. Y. Tsymbal: University of Nebraska
J. M. D. Coey: Trinity College
W. W. Cao: Harbin Institute of Technology

Nature Communications, 2018, vol. 9, issue 1, 1-7

Abstract: Abstract Complex-oxide materials exhibit physical properties that involve the interplay of charge and spin degrees of freedom. However, an ambipolar oxide that is able to exhibit both electron-doped and hole-doped ferromagnetism in the same material has proved elusive. Here we report ambipolar ferromagnetism in LaMnO3, with electron–hole asymmetry of the ferromagnetic order. Starting from an undoped atomically thin LaMnO3 film, we electrostatically dope the material with electrons or holes according to the polarity of a voltage applied across an ionic liquid gate. Magnetotransport characterization reveals that an increase of either electron-doping or hole-doping induced ferromagnetic order in this antiferromagnetic compound, and leads to an insulator-to-metal transition with colossal magnetoresistance showing electron–hole asymmetry. These findings are supported by density functional theory calculations, showing that strengthening of the inter-plane ferromagnetic exchange interaction is the origin of the ambipolar ferromagnetism. The result raises the prospect of exploiting ambipolar magnetic functionality in strongly correlated electron systems.

Date: 2018
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DOI: 10.1038/s41467-018-04233-5

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