Ultrafast probes of electron–hole transitions between two atomic layers

Xiewen Wen, Hailong Chen, Tianmin Wu, Zhihao Yu, Qirong Yang, Jingwen Deng, Zhengtang Liu, Xin Guo, Jianxin Guan, Xiang Zhang, Yongji Gong, Jiangtan Yuan, Zhuhua Zhang, Chongyue Yi, Xuefeng Guo, Pulickel M. Ajayan, Wei Zhuang (), Zhirong Liu (), Jun Lou () and Junrong Zheng ()
Additional contact information
Xiewen Wen: Beijing National Laboratory for Molecular Sciences, Peking University
Hailong Chen: CAS Key Laboratory of Soft Matter Physics, Institute of Physics, Chinese Academy of Sciences
Tianmin Wu: University of Science and Technology of China
Zhihao Yu: Beijing National Laboratory for Molecular Sciences, Peking University
Qirong Yang: Beijing National Laboratory for Molecular Sciences, Peking University
Jingwen Deng: Beijing National Laboratory for Molecular Sciences, Peking University
Zhengtang Liu: Beijing National Laboratory for Molecular Sciences, Peking University
Xin Guo: Beijing National Laboratory for Molecular Sciences, Peking University
Jianxin Guan: Beijing National Laboratory for Molecular Sciences, Peking University
Xiang Zhang: Rice University
Yongji Gong: Rice University
Jiangtan Yuan: Rice University
Zhuhua Zhang: Rice University
Chongyue Yi: Rice University
Xuefeng Guo: Beijing National Laboratory for Molecular Sciences, Peking University
Pulickel M. Ajayan: Rice University
Wei Zhuang: Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences
Zhirong Liu: Beijing National Laboratory for Molecular Sciences, Peking University
Jun Lou: Rice University
Junrong Zheng: Beijing National Laboratory for Molecular Sciences, Peking University

Nature Communications, 2018, vol. 9, issue 1, 1-9

Abstract: Abstract Phase transitions of electron–hole pairs on semiconductor/conductor interfaces determine fundamental properties of optoelectronics. To investigate interfacial dynamical transitions of charged quasiparticles, however, remains a grand challenge. By employing ultrafast mid-infrared microspectroscopic probes to detect excitonic internal quantum transitions and two-dimensional atomic device fabrications, we are able to directly monitor the interplay between free carriers and insulating interlayer excitons between two atomic layers. Our observations reveal unexpected ultrafast formation of tightly bound interlayer excitons between conducting graphene and semiconducting MoSe2. The result suggests carriers in the doped graphene are no longer massless, and an effective mass as small as one percent of free electron mass is sufficient to confine carriers within a 2D hetero space with energy 10 times larger than the room-temperature thermal energy. The interlayer excitons arise within 1 ps. Their formation effectively blocks charge recombination and improves charge separation efficiency for more than one order of magnitude.

Date: 2018
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DOI: 10.1038/s41467-018-04291-9

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