Soft Coulomb gap and asymmetric scaling towards metal-insulator quantum criticality in multilayer MoS2

Byoung Hee Moon (), Jung Jun Bae, Min-Kyu Joo, Homin Choi, Gang Hee Han, Hanjo Lim and Young Hee Lee ()
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Byoung Hee Moon: Institute for Basic Science (IBS)
Jung Jun Bae: Institute for Basic Science (IBS)
Min-Kyu Joo: Institute for Basic Science (IBS)
Homin Choi: Institute for Basic Science (IBS)
Gang Hee Han: Institute for Basic Science (IBS)
Hanjo Lim: Institute for Basic Science (IBS)
Young Hee Lee: Institute for Basic Science (IBS)

Nature Communications, 2018, vol. 9, issue 1, 1-8

Abstract: Abstract Quantum localization–delocalization of carriers are well described by either carrier–carrier interaction or disorder. When both effects come into play, however, a comprehensive understanding is not well established mainly due to complexity and sparse experimental data. Recently developed two-dimensional layered materials are ideal in describing such mesoscopic critical phenomena as they have both strong interactions and disorder. The transport in the insulating phase is well described by the soft Coulomb gap picture, which demonstrates the contribution of both interactions and disorder. Using this picture, we demonstrate the critical power law behavior of the localization length, supporting quantum criticality. We observe asymmetric critical exponents around the metal-insulator transition through temperature scaling analysis, which originates from poor screening in insulating regime and conversely strong screening in metallic regime due to free carriers. The effect of asymmetric scaling behavior is weakened in monolayer MoS2 due to a dominating disorder.

Date: 2018
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DOI: 10.1038/s41467-018-04474-4

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