Crystal step edges can trap electrons on the surfaces of n-type organic semiconductors

Tao He, Yanfei Wu, Gabriele D’Avino, Elliot Schmidt, Matthias Stolte, Jérôme Cornil, David Beljonne, P. Paul Ruden, Frank Würthner and C. Daniel Frisbie ()
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Tao He: University of Minnesota
Yanfei Wu: University of Minnesota
Gabriele D’Avino: Institut Néel CNRS and Grenoble Alpes University
Elliot Schmidt: University of Minnesota
Matthias Stolte: Universität Würzburg
Jérôme Cornil: Université de Mons
David Beljonne: Université de Mons
P. Paul Ruden: University of Minnesota
Frank Würthner: Universität Würzburg
C. Daniel Frisbie: University of Minnesota

Nature Communications, 2018, vol. 9, issue 1, 1-9

Abstract: Abstract Understanding relationships between microstructure and electrical transport is an important goal for the materials science of organic semiconductors. Combining high-resolution surface potential mapping by scanning Kelvin probe microscopy (SKPM) with systematic field effect transport measurements, we show that step edges can trap electrons on the surfaces of single crystal organic semiconductors. n-type organic semiconductor crystals exhibiting positive step edge surface potentials display threshold voltages that increase and carrier mobilities that decrease with increasing step density, characteristic of trapping, whereas crystals that do not have positive step edge surface potentials do not have strongly step density dependent transport. A device model and microelectrostatics calculations suggest that trapping can be intrinsic to step edges for crystals of molecules with polar substituents. The results provide a unique example of a specific microstructure–charge trapping relationship and highlight the utility of surface potential imaging in combination with transport measurements as a productive strategy for uncovering microscopic structure–property relationships in organic semiconductors.

Date: 2018
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DOI: 10.1038/s41467-018-04479-z

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