Efficient and self-adaptive in-situ learning in multilayer memristor neural networks

Can Li, Daniel Belkin, Yunning Li, Peng Yan, Miao Hu, Ning Ge, Hao Jiang, Eric Montgomery, Peng Lin, Zhongrui Wang, Wenhao Song, John Paul Strachan, Mark Barnell, Qing Wu, R. Stanley Williams, J. Joshua Yang () and Qiangfei Xia ()
Additional contact information
Can Li: University of Massachusetts
Daniel Belkin: University of Massachusetts
Yunning Li: University of Massachusetts
Peng Yan: University of Massachusetts
Miao Hu: Hewlett Packard Enterprise
Ning Ge: HP Inc.
Hao Jiang: University of Massachusetts
Eric Montgomery: Hewlett Packard Enterprise
Peng Lin: University of Massachusetts
Zhongrui Wang: University of Massachusetts
Wenhao Song: University of Massachusetts
John Paul Strachan: Hewlett Packard Enterprise
Mark Barnell: Information Directorate
Qing Wu: Information Directorate
R. Stanley Williams: Hewlett Packard Enterprise
J. Joshua Yang: University of Massachusetts
Qiangfei Xia: University of Massachusetts

Nature Communications, 2018, vol. 9, issue 1, 1-8

Abstract: Abstract Memristors with tunable resistance states are emerging building blocks of artificial neural networks. However, in situ learning on a large-scale multiple-layer memristor network has yet to be demonstrated because of challenges in device property engineering and circuit integration. Here we monolithically integrate hafnium oxide-based memristors with a foundry-made transistor array into a multiple-layer neural network. We experimentally demonstrate in situ learning capability and achieve competitive classification accuracy on a standard machine learning dataset, which further confirms that the training algorithm allows the network to adapt to hardware imperfections. Our simulation using the experimental parameters suggests that a larger network would further increase the classification accuracy. The memristor neural network is a promising hardware platform for artificial intelligence with high speed-energy efficiency.

Date: 2018
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DOI: 10.1038/s41467-018-04484-2

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