Vapor transport deposition of antimony selenide thin film solar cells with 7.6% efficiency

Xixing Wen, Chao Chen, Shuaicheng Lu, Kanghua Li, Rokas Kondrotas, Yang Zhao, Wenhao Chen, Liang Gao, Chong Wang, Jun Zhang, Guangda Niu and Jiang Tang ()
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Xixing Wen: Huazhong University of Science and Technology
Chao Chen: Huazhong University of Science and Technology
Shuaicheng Lu: Huazhong University of Science and Technology
Kanghua Li: Huazhong University of Science and Technology
Rokas Kondrotas: Huazhong University of Science and Technology
Yang Zhao: Huazhong University of Science and Technology
Wenhao Chen: Huazhong University of Science and Technology
Liang Gao: Huazhong University of Science and Technology
Chong Wang: Huazhong University of Science and Technology
Jun Zhang: Huazhong University of Science and Technology
Guangda Niu: Huazhong University of Science and Technology
Jiang Tang: Huazhong University of Science and Technology

Nature Communications, 2018, vol. 9, issue 1, 1-10

Abstract: Abstract Antimony selenide is an emerging promising thin film photovoltaic material thanks to its binary composition, suitable bandgap, high absorption coefficient, inert grain boundaries and earth-abundant constituents. However, current devices produced from rapid thermal evaporation strategy suffer from low-quality film and unsatisfactory performance. Herein, we develop a vapor transport deposition technique to fabricate antimony selenide films, a technique that enables continuous and low-cost manufacturing of cadmium telluride solar cells. We improve the crystallinity of antimony selenide films and then successfully produce superstrate cadmium sulfide/antimony selenide solar cells with a certified power conversion efficiency of 7.6%, a net 2% improvement over previous 5.6% record of the same device configuration. We analyze the deep defects in antimony selenide solar cells, and find that the density of the dominant deep defects is reduced by one order of magnitude using vapor transport deposition process.

Date: 2018
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DOI: 10.1038/s41467-018-04634-6

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