The role of momentum-dark excitons in the elementary optical response of bilayer WSe2

Jessica Lindlau, Malte Selig, Andre Neumann, Léo Colombier, Jonathan Förste, Victor Funk, Michael Förg, Jonghwan Kim, Gunnar Berghäuser, Takashi Taniguchi, Kenji Watanabe, Feng Wang, Ermin Malic and Alexander Högele ()
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Jessica Lindlau: Ludwig-Maximilians-Universität München
Malte Selig: Chalmers University of Technology
Andre Neumann: Ludwig-Maximilians-Universität München
Léo Colombier: Ludwig-Maximilians-Universität München
Jonathan Förste: Ludwig-Maximilians-Universität München
Victor Funk: Ludwig-Maximilians-Universität München
Michael Förg: Ludwig-Maximilians-Universität München
Jonghwan Kim: University of California at Berkeley
Gunnar Berghäuser: Chalmers University of Technology
Takashi Taniguchi: National Institute for Materials Science
Kenji Watanabe: National Institute for Materials Science
Feng Wang: University of California at Berkeley
Ermin Malic: Chalmers University of Technology
Alexander Högele: Ludwig-Maximilians-Universität München

Nature Communications, 2018, vol. 9, issue 1, 1-7

Abstract: Abstract Monolayer transition metal dichalcogenides (TMDs) undergo substantial changes in the single-particle band structure and excitonic optical response upon the addition of just one layer. As opposed to the single-layer limit, the bandgap of bilayer (BL) TMD semiconductors is indirect which results in reduced photoluminescence with richly structured spectra that have eluded a detailed understanding to date. Here, we provide a closed interpretation of cryogenic emission from BL WSe2 as a representative material for the wider class of TMD semiconductors. By combining theoretical calculations with comprehensive spectroscopy experiments, we identify the crucial role of momentum-indirect excitons for the understanding of BL TMD emission. Our results shed light on the origin of quantum dot formation in BL crystals and will facilitate further advances directed at opto-electronic applications of layered TMD semiconductors in van der Waals heterostructures and devices.

Date: 2018
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DOI: 10.1038/s41467-018-04877-3

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