Zero-static power radio-frequency switches based on MoS2 atomristors

Myungsoo Kim, Ruijing Ge, Xiaohan Wu, Xing Lan, Jesse Tice, Jack C. Lee and Deji Akinwande ()
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Myungsoo Kim: The University of Texas at Austin
Ruijing Ge: The University of Texas at Austin
Xiaohan Wu: The University of Texas at Austin
Xing Lan: NG Next, Northrop Grumman Corporation
Jesse Tice: NG Next, Northrop Grumman Corporation
Jack C. Lee: The University of Texas at Austin
Deji Akinwande: The University of Texas at Austin

Nature Communications, 2018, vol. 9, issue 1, 1-7

Abstract: Abstract Recently, non-volatile resistance switching or memristor (equivalently, atomristor in atomic layers) effect was discovered in transitional metal dichalcogenides (TMD) vertical devices. Owing to the monolayer-thin transport and high crystalline quality, ON-state resistances below 10 Ω are achievable, making MoS2 atomristors suitable as energy-efficient radio-frequency (RF) switches. MoS2 RF switches afford zero-hold voltage, hence, zero-static power dissipation, overcoming the limitation of transistor and mechanical switches. Furthermore, MoS2 switches are fully electronic and can be integrated on arbitrary substrates unlike phase-change RF switches. High-frequency results reveal that a key figure of merit, the cutoff frequency (fc), is about 10 THz for sub-μm2 switches with favorable scaling that can afford fc above 100 THz for nanoscale devices, exceeding the performance of contemporary switches that suffer from an area-invariant scaling. These results indicate a new electronic application of TMDs as non-volatile switches for communication platforms, including mobile systems, low-power internet-of-things, and THz beam steering.

Date: 2018
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DOI: 10.1038/s41467-018-04934-x

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