Direct visualization of current-induced spin accumulation in topological insulators

Yang Liu, Jean Besbas, Yi Wang, Pan He, Mengji Chen, Dapeng Zhu, Yang Wu, Jong Min Lee, Lan Wang, Jisoo Moon, Nikesh Koirala, Seongshik Oh and Hyunsoo Yang ()
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Yang Liu: National University of Singapore
Jean Besbas: National University of Singapore
Yi Wang: National University of Singapore
Pan He: National University of Singapore
Mengji Chen: National University of Singapore
Dapeng Zhu: National University of Singapore
Yang Wu: National University of Singapore
Jong Min Lee: National University of Singapore
Lan Wang: School of Science, Department of Physics
Jisoo Moon: Rutgers, The State University of New Jersey
Nikesh Koirala: Rutgers, The State University of New Jersey
Seongshik Oh: Rutgers, The State University of New Jersey
Hyunsoo Yang: National University of Singapore

Nature Communications, 2018, vol. 9, issue 1, 1-6

Abstract: Abstract Charge-to-spin conversion in various materials is the key for the fundamental understanding of spin-orbitronics and efficient magnetization manipulation. Here we report the direct spatial imaging of current-induced spin accumulation at the channel edges of Bi2Se3 and BiSbTeSe2 topological insulators as well as Pt by a scanning photovoltage microscope at room temperature. The spin polarization is along the out-of-plane direction with opposite signs for the two channel edges. The accumulated spin direction reverses sign upon changing the current direction and the detected spin signal shows a linear dependence on the magnitude of currents, indicating that our observed phenomena are current-induced effects. The spin Hall angle of Bi2Se3, BiSbTeSe2, and Pt is determined to be 0.0085, 0.0616, and 0.0085, respectively. Our results open up the possibility of optically detecting the current-induced spin accumulations, and thus point towards a better understanding of the interaction between spins and circularly polarized light.

Date: 2018
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DOI: 10.1038/s41467-018-04939-6

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