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Very large tunneling magnetoresistance in layered magnetic semiconductor CrI3

Zhe Wang (), Ignacio Gutiérrez-Lezama, Nicolas Ubrig, Martin Kroner, Marco Gibertini, Takashi Taniguchi, Kenji Watanabe, Ataç Imamoğlu, Enrico Giannini and Alberto F. Morpurgo ()
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Zhe Wang: University of Geneva
Ignacio Gutiérrez-Lezama: University of Geneva
Nicolas Ubrig: University of Geneva
Martin Kroner: Institute of Quantum Electronics, ETH Zürich
Marco Gibertini: University of Geneva
Takashi Taniguchi: National Institute for Materials Science
Kenji Watanabe: National Institute for Materials Science
Ataç Imamoğlu: Institute of Quantum Electronics, ETH Zürich
Enrico Giannini: University of Geneva
Alberto F. Morpurgo: University of Geneva

Nature Communications, 2018, vol. 9, issue 1, 1-8

Abstract: Abstract Magnetic layered van der Waals crystals are an emerging class of materials giving access to new physical phenomena, as illustrated by the recent observation of 2D ferromagnetism in Cr2Ge2Te6 and CrI3. Of particular interest in semiconductors is the interplay between magnetism and transport, which has remained unexplored. Here we report magneto-transport measurements on exfoliated CrI3 crystals. We find that tunneling conduction in the direction perpendicular to the crystalline planes exhibits a magnetoresistance as large as 10,000%. The evolution of the magnetoresistance with magnetic field and temperature reveals that the phenomenon originates from multiple transitions to different magnetic states, whose possible microscopic nature is discussed on the basis of all existing experimental observations. This observed dependence of the conductance of a tunnel barrier on its magnetic state is a phenomenon that demonstrates the presence of a strong coupling between transport and magnetism in magnetic van der Waals semiconductors.

Date: 2018
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DOI: 10.1038/s41467-018-04953-8

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