Highly stable QLEDs with improved hole injection via quantum dot structure tailoring

Weiran Cao, Chaoyu Xiang, Yixing Yang, Qi Chen, Liwei Chen, Xiaolin Yan () and Lei Qian ()
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Weiran Cao: Nanshan District
Chaoyu Xiang: Nanshan District
Yixing Yang: Nanshan District
Qi Chen: Chinese Academy of Sciences
Liwei Chen: Chinese Academy of Sciences
Xiaolin Yan: Nanshan District
Lei Qian: Nanshan District

Nature Communications, 2018, vol. 9, issue 1, 1-6

Abstract: Abstract For the state-of-the-art quantum dot light-emitting diodes, while the ZnO nanoparticle layers can provide effective electron injections into quantum dots layers, the hole transporting materials usually cannot guarantee sufficient hole injection owing to the deep valence band of quantum dots. Developing proper hole transporting materials to match energy levels with quantum dots remains a great challenge to further improve the device efficiency and operation lifetime. Here we demonstrate high-performance quantum dot light-emitting diodes with much extended operation lifetime using quantum dots with tailored energy band structures that are favorable for hole injections. These devices show a T95 operation lifetime of more than 2300 h with an initial brightness of 1000 cd m−2, and an equivalent T50 lifetime at 100 cd m−2 of more than 2,200,000 h, which meets the industrial requirement for display applications.

Date: 2018
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DOI: 10.1038/s41467-018-04986-z

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