Evidence for line width and carrier screening effects on excitonic valley relaxation in 2D semiconductors

Yuhei Miyauchi (), Satoru Konabe (), Feijiu Wang, Wenjin Zhang, Alexander Hwang, Yusuke Hasegawa, Lizhong Zhou, Shinichiro Mouri, Minglin Toh, Goki Eda and Kazunari Matsuda
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Yuhei Miyauchi: Kyoto University
Satoru Konabe: Tokyo University of Science
Feijiu Wang: Kyoto University
Wenjin Zhang: Kyoto University
Alexander Hwang: Rice University
Yusuke Hasegawa: Kyoto University
Lizhong Zhou: Kyoto University
Shinichiro Mouri: Kyoto University
Minglin Toh: National University of Singapore
Goki Eda: National University of Singapore
Kazunari Matsuda: Kyoto University

Nature Communications, 2018, vol. 9, issue 1, 1-10

Abstract: Abstract Monolayers of transition metal dichalcogenides (TMDC) have recently emerged as excellent platforms for exploiting new physics and applications relying on electronic valley degrees of freedom in two-dimensional (2D) systems. Here, we demonstrate that Coulomb screening by 2D carriers plays a critical role in excitonic valley pseudospin relaxation processes in naturally carrier-doped WSe2 monolayers (1L-WSe2). The exciton valley relaxation times were examined using polarization- and time-resolved photoluminescence spectroscopy at temperatures ranging from 10 to 160 K. We show that the temperature-dependent exciton valley relaxation times in 1L-WSe2 under various exciton and carrier densities can be understood using a unified framework of intervalley exciton scattering via momentum-dependent long-range electron–hole exchange interactions screened by 2D carriers that depend on the carrier density and the exciton linewidth. Moreover, the developed framework was successfully applied to engineer the valley polarization of excitons in 1L-WSe2. These findings may facilitate the development of TMDC-based opto-valleytronic devices.

Date: 2018
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DOI: 10.1038/s41467-018-04988-x

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