An InP-based vortex beam emitter with monolithically integrated laser

Juan Zhang, Changzheng Sun, Bing Xiong, Jian Wang, Zhibiao Hao, Lai Wang, Yanjun Han, Hongtao Li, Yi Luo (), Yi Xiao, Chuanqing Yu, Takuo Tanemura, Yoshiaki Nakano (), Shimao Li, Xinlun Cai () and Siyuan Yu
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Juan Zhang: Tsinghua University
Changzheng Sun: Tsinghua University
Bing Xiong: Tsinghua University
Jian Wang: Tsinghua University
Zhibiao Hao: Tsinghua University
Lai Wang: Tsinghua University
Yanjun Han: Tsinghua University
Hongtao Li: Tsinghua University
Yi Luo: Tsinghua University
Yi Xiao: the University of Tokyo
Chuanqing Yu: the University of Tokyo
Takuo Tanemura: the University of Tokyo
Yoshiaki Nakano: the University of Tokyo
Shimao Li: Sun Yat-sen University
Xinlun Cai: Sun Yat-sen University
Siyuan Yu: Sun Yat-sen University

Nature Communications, 2018, vol. 9, issue 1, 1-6

Abstract: Abstract Semiconductor devices capable of generating a vortex beam with a specific orbital angular momentum (OAM) order are highly attractive for applications ranging from nanoparticle manipulation, imaging and microscopy to fiber and quantum communications. In this work, an electrically pumped integrated OAM emitter operating at telecom wavelengths is fabricated by monolithically integrating an optical vortex emitter with a distributed feedback laser on the same InGaAsP/InP epitaxial wafer. A single-step dry-etching process is adopted to complete the OAM emitter, equipped with specially designed top gratings. The vortex beam emitted by the integrated device is captured and its OAM mode purity characterized. The integrated OAM emitter eliminates the external laser required by silicon- or silicon-on-insulator-based OAM emitters, thus demonstrating great potential for applications in communication systems and the quantum domain.

Date: 2018
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DOI: 10.1038/s41467-018-05170-z

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