A gate-free monolayer WSe2 pn diode

Jhih-Wei Chen, Shun-Tsung Lo, Sheng-Chin Ho, Sheng-Shong Wong, Thi-Hai-Yen Vu, Xin-Quan Zhang, Yi- De Liu, Yu-You Chiou, Yu-Xun Chen, Jan-Chi Yang, Yi-Chun Chen, Ying-Hao Chu, Yi-Hsien Lee, Chung-Jen Chung, Tse-Ming Chen, Chia-Hao Chen () and Chung-Lin Wu ()
Additional contact information
Jhih-Wei Chen: National Cheng Kung University
Shun-Tsung Lo: National Cheng Kung University
Sheng-Chin Ho: National Cheng Kung University
Sheng-Shong Wong: National Cheng Kung University
Thi-Hai-Yen Vu: National Cheng Kung University
Xin-Quan Zhang: National Tsing Hua University
Yi- De Liu: National Cheng Kung University
Yu-You Chiou: National Cheng Kung University
Yu-Xun Chen: National Chiao Tung University
Jan-Chi Yang: National Cheng Kung University
Yi-Chun Chen: National Cheng Kung University
Ying-Hao Chu: National Chiao Tung University
Yi-Hsien Lee: National Tsing Hua University
Chung-Jen Chung: National Cheng Kung University
Tse-Ming Chen: National Cheng Kung University
Chia-Hao Chen: National Synchrotron Radiation Research Center (NSRRC)
Chung-Lin Wu: National Cheng Kung University

Nature Communications, 2018, vol. 9, issue 1, 1-7

Abstract: Abstract Interest in bringing p- and n-type monolayer semiconducting transition metal dichalcogenides (TMD) into contact to form rectifying pn diode has thrived since it is crucial to control the electrical properties in two-dimensional (2D) electronic and optoelectronic devices. Usually this involves vertically stacking different TMDs with pn heterojunction or, laterally manipulating carrier density by gate biasing. Here, by utilizing a locally reversed ferroelectric polarization, we laterally manipulate the carrier density and created a WSe2 pn homojunction on the supporting ferroelectric BiFeO3 substrate. This non-volatile WSe2 pn homojunction is demonstrated with optical and scanning probe methods and scanning photoelectron micro-spectroscopy. A homo-interface is a direct manifestation of our WSe2 pn diode, which can be quantitatively understood as a clear rectifying behavior. The non-volatile confinement of carriers and associated gate-free pn homojunction can be an addition to the 2D electron–photon toolbox and pave the way to develop laterally 2D electronics and photonics.

Date: 2018
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DOI: 10.1038/s41467-018-05326-x

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