Spin inversion in graphene spin valves by gate-tunable magnetic proximity effect at one-dimensional contacts

Jinsong Xu, Simranjeet Singh, Jyoti Katoch, Guanzhong Wu, Tiancong Zhu, Igor Žutić and Roland K. Kawakami ()
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Jinsong Xu: The Ohio State University
Simranjeet Singh: The Ohio State University
Jyoti Katoch: The Ohio State University
Guanzhong Wu: The Ohio State University
Tiancong Zhu: The Ohio State University
Igor Žutić: University at Buffalo, State University of New York
Roland K. Kawakami: The Ohio State University

Nature Communications, 2018, vol. 9, issue 1, 1-6

Abstract: Abstract Graphene has remarkable opportunities for spintronics due to its high mobility and long spin diffusion length, especially when encapsulated in hexagonal boron nitride (h-BN). Here, we demonstrate gate-tunable spin transport in such encapsulated graphene-based spin valves with one-dimensional (1D) ferromagnetic edge contacts. An electrostatic backgate tunes the Fermi level of graphene to probe different energy levels of the spin-polarized density of states (DOS) of the 1D ferromagnetic contact, which interact through a magnetic proximity effect (MPE) that induces ferromagnetism in graphene. In contrast to conventional spin valves, where switching between high- and low-resistance configuration requires magnetization reversal by an applied magnetic field or a high-density spin-polarized current, we provide an alternative path with the gate-controlled spin inversion in graphene.

Date: 2018
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DOI: 10.1038/s41467-018-05358-3

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