Bottom-up growth of n-type monolayer molecular crystals on polymeric substrate for optoelectronic device applications

Yanjun Shi, Lang Jiang (), Jie Liu, Zeyi Tu, Yuanyuan Hu, Qinghe Wu, Yuanping Yi, Eliot Gann, Christopher R. McNeill, Hongxiang Li, Wenping Hu (), Daoben Zhu and Henning Sirringhaus ()
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Yanjun Shi: Chinese Academy of Sciences
Lang Jiang: Chinese Academy of Sciences
Jie Liu: Chinese Academy of Sciences
Zeyi Tu: Chinese Academy of Sciences
Yuanyuan Hu: Cambridge University
Qinghe Wu: Chinese Academy of Sciences
Yuanping Yi: Chinese Academy of Sciences
Eliot Gann: Australian Synchrotron
Christopher R. McNeill: Monash University
Hongxiang Li: Chinese Academy of Sciences
Wenping Hu: Chinese Academy of Sciences
Daoben Zhu: Chinese Academy of Sciences
Henning Sirringhaus: Cambridge University

Nature Communications, 2018, vol. 9, issue 1, 1-8

Abstract: Abstract Self-assembly of monolayers of functional molecules on dielectric surfaces is a promising approach for the development of molecular devices proposed in the 1970s. Substrate chemically bonded self-assembled monolayers of semiconducting conjugated molecules exhibit low mobility. And self-assembled monolayer molecular crystals are difficult to scale up and limited to growth on substrates terminated by hydroxyl groups, which makes it difficult to realize sophisticated device functions, particularly for those relying on n-type electron transport, as electrons suffer severe charge trapping on hydroxyl terminated surfaces. Here we report a gravity-assisted, two-dimensional spatial confinement method for bottom-up growth of high-quality n-type single-crystalline monolayers over large, centimeter-sized areas. We demonstrate that by this method, n-type monolayer molecular crystals with high field-effect mobility of 1.24 cm2 V−1 s−1 and band-like transport characteristics can be grown on hydroxyl-free polymer surface. Furthermore, we used these monolayer molecular crystals to realize high-performance crystalline, gate-/light-tunable lateral organic p–n diodes.

Date: 2018
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DOI: 10.1038/s41467-018-05390-3

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