Lighting up silicon nanoparticles with Mie resonances

Chengyun Zhang, Yi Xu, Jin Liu, Juntao Li, Jin Xiang, Hui Li, Jinxiang Li, Qiaofeng Dai, Sheng Lan () and Andrey E. Miroshnichenko ()
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Chengyun Zhang: South China Normal University
Yi Xu: Jinan University
Jin Liu: Sun Yat-Sen University
Juntao Li: Sun Yat-Sen University
Jin Xiang: South China Normal University
Hui Li: South China Normal University
Jinxiang Li: South China Normal University
Qiaofeng Dai: South China Normal University
Sheng Lan: South China Normal University
Andrey E. Miroshnichenko: University of New South Wales

Nature Communications, 2018, vol. 9, issue 1, 1-7

Abstract: Abstract As one of the most important semiconductors, silicon has been used to fabricate electronic devices, waveguides, detectors, solar cells, etc. However, the indirect bandgap and low quantum efficiency (10−7) hinder the use of silicon for making good emitters. For integrated photonic circuits, silicon-based emitters with sizes in the range of 100−300 nm are highly desirable. Here, we show the use of the electric and magnetic resonances in silicon nanoparticles to enhance the quantum efficiency and demonstrate the white-light emission from silicon nanoparticles with feature sizes of ~200 nm. The magnetic and electric dipole resonances are employed to dramatically increase the relaxation time of hot carriers, while the magnetic and electric quadrupole resonances are utilized to reduce the radiative recombination lifetime of hot carriers. This strategy leads to an enhancement in the quantum efficiency of silicon nanoparticles by nearly five orders of magnitude as compared with bulk silicon, taking the three-photon-induced absorption into account.

Date: 2018
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DOI: 10.1038/s41467-018-05394-z

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