Two-dimensional multibit optoelectronic memory with broadband spectrum distinction

Du Xiang, Tao Liu, Jilian Xu, Jun Y. Tan, Zehua Hu, Bo Lei, Yue Zheng, Jing Wu, A. H. Castro Neto, Lei Liu and Wei Chen ()
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Du Xiang: National University of Singapore
Tao Liu: National University of Singapore
Jilian Xu: Chinese Academy of Sciences
Jun Y. Tan: National University of Singapore
Zehua Hu: National University of Singapore
Bo Lei: National University of Singapore
Yue Zheng: National University of Singapore
Jing Wu: Institute of Materials Research and Engineering (IMRE)
A. H. Castro Neto: National University of Singapore
Lei Liu: Chinese Academy of Sciences
Wei Chen: National University of Singapore

Nature Communications, 2018, vol. 9, issue 1, 1-8

Abstract: Abstract Optoelectronic memory plays a vital role in modern semiconductor industry. The fast emerging requirements for device miniaturization and structural flexibility have diverted research interest to two-dimensional thin layered materials. Here, we report a multibit nonvolatile optoelectronic memory based on a heterostructure of monolayer tungsten diselenide and few-layer hexagonal boron nitride. The tungsten diselenide/boron nitride memory exhibits a memory switching ratio approximately 1.1 × 106, which ensures over 128 (7 bit) distinct storage states. The memory demonstrates robustness with retention time over 4.5 × 104 s. Moreover, the ability of broadband spectrum distinction enables its application in filter-free color image sensor. This concept is further validated through the realization of integrated tungsten diselenide/boron nitride pixel matrix which captured a specific image recording the three primary colors (red, green, and blue). The heterostructure architecture is also applicable to other two-dimensional materials, which is confirmed by the realization of black phosphorus/boron nitride optoelectronic memory.

Date: 2018
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DOI: 10.1038/s41467-018-05397-w

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